ST相关型号_深圳市大源实业科技有限公司

MOSFET N-channel 650 V, 0.338 Ohm typ., 10 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package

IGBT 模块 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter, 15 A, 600 V short-circuit rugged IGBT

MOSFET N-channel 600 V, 0.39 Ohm typ., 7 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

MOSFET Automotive-grade N-channel 40 V, 3.0 mOhm typ., 80 A STripFET F6 Power MOSFET in a DPAK package

MOSFET N-channel 650 V 0.175 17A MDmesh

MOSFET N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 5x6 HV package

MOSFET N-channel 650 V MDMesh M5

IGBT 晶体管 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package

IGBT 晶体管 Auto 390V IGBT Clamped 300mJ EAS

MOSFET N-CH 40V 11mOhm typ 200A STripFET

MOSFET N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package

MOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package

MOSFET N-Ch 600V 1.26Ohm typ. 3.7A MDmesh M2

MOSFET N-channel 525 V MDMesh

MOSFET N-Ch 500 Volt 14 Amp Zener SuperMESH

MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2

IGBT 晶体管 Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package