ST相关型号_深圳市大源实业科技有限公司

IGBT 晶体管 Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

IGBT 晶体管 Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

IGBT 晶体管 Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

双极晶体管 - 双极结型晶体管(BJT) NPN power transistor

射频金属氧化物半导体场效应(RF MOSFET)晶体管 350W 36V 1030-1090 MHz LDMOS TRANSISTOR

MOSFET Automotive-grade N-channel 40 V, 3.0 mOhm typ., 55 A STripFET F6 in a PowerFLAT 5x6 package

MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 long leads package

MOSFET Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package

MOSFET P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package

MOSFET Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package

MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3

MOSFET POWER MOSFET

MOSFET N-CH 100V 0.0068Ohm 80A STripFET VII

IGBT 晶体管 Trench gate field-stop IGBT M series, 650 V, 15 A low loss

MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package

IGBT 晶体管 600V 6A N-Channel

MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A

MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package

MOSFET N-Ch, 55V-2.9ohms 120A

MOSFET N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in DPAK package