ST相关型号_深圳市大源实业科技有限公司

MOSFET N-channel 600 V, 0.195 Ohm typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package

MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh M5

IGBT 晶体管 600V 40A Trench Gate 1.8V Vce IGBT

MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5

MOSFET N-CH 80V 4 mOhm 24A STripFET VII

MOSFET Dual N-CH 40V 15A STripFET V

MOSFET 100 V Mosfet 35 RDS 25A D2PAK

MOSFET P-channel 60 V, 0.023 Ohm typ., 42 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package

IGBT 晶体管 Trench gate field-stop IGBT, H series 600 V, 5 A high speed

MOSFET P-channel 40 V, 0.0155 Ohm typ., 42 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package

双极晶体管 - 双极结型晶体管(BJT) Very High Volt NPN 1400V 200mA PWR Tran

MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package

MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5

MOSFET N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-247 package

MOSFET N-CH 600V 0.186Ohm typ. 18A MDmesh M2

MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 120W

MOSFET N-channel 600 V 0.3 20 Ohm 10A MDmesh II

射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch 65 Volt 5 Amp

MOSFET N-channel 600 V 0.190ohm 16A Mdmesh

MOSFET N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package