ST相关型号_深圳市大源实业科技有限公司

射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.

射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch 65 Volt 5 Amp

射频金属氧化物半导体场效应(RF MOSFET)晶体管 150W-50V MoistResist HF/VHF DMOS TRANSIST

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz

MOSFET N-Ch 600 Volt 70 Amp

MOSFET N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh M5 Power MOSFET in a ISOTOP package

MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package

MOSFET N-Ch 500 Volt 48 Amp

MOSFET 1200V silicon carbide MOSFET

MOSFET N-Ch 600 Volt 60 Amp

MOSFET N-CH 650V 0.037Ohm 58A

MOSFET N-CH 600V 0.031Ohm typ. 68A MDmesh M2

IGBT 晶体管 Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

MOSFET N-channel 650 V, 0.039 Ohm typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package

IGBT 晶体管 Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

MOSFET NCH 65V 33A MDMESH V

IGBT 晶体管 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

MOSFET

MOSFET N-channel 600 V, 0.035 Ohm typ., 63 A MDmesh M6 Power MOSFET in a TO247-4 package