ST相关型号_深圳市大源实业科技有限公司

MOSFET N-Ch 500 Volt 45 Amp

IGBT 晶体管 Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

MOSFET N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package

IGBT 晶体管 Trench gate field-stop IGBT, M series 1200 V, 8 A low loss

IGBT 晶体管 600V 30A High Speed Trench Gate IGBT

IGBT 晶体管 600V 20A Hi Spd TrenchGate FieldStop

IGBT 晶体管 600V 20A High Speed Trench Gate IGBT

IGBT 晶体管 Trench gate field-stop IGBT, HB series 650 V, 20 A high speed

MOSFET Low charge STripFET

IGBT 晶体管 Trench gate field-stop IGBT, H series 600 V, 15 A high speed

MOSFET N-channel 60 V, 0.0028 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package

IGBT 晶体管 Trench gate field-stop IGBT M series, 650 V 20 A low loss

MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2

MOSFET N-channel 80 V, 0.003 Ohm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package

IGBT 晶体管 Trench gate field-stop IGBT M series, 650 V 20 A low loss

IGBT 晶体管 PTD HIGH VOLTAGE

MOSFET N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFETs in TO-220 package

MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package

MOSFET N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package

MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package